2D fin field

Nature volume 616, pages 66–72 (2023)Cite this article

9328 Accesses

2 Citations

21 Altmetric

Metrics details

A Publisher Correction to this article was published on 03 May 2023

This article has been updated

Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors1,2,3,4,5, but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2 nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270 cm2 V−1 s−1, ultralow off-state current (IOFF) down to about 1 pA μm−1, high on/off current ratios (ION/IOFF) up to 108 and high on-state current (ION) up to 830 μA μm−1 at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)6. The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore's law.

This is a preview of subscription content, access via your institution

Access Nature and 54 other Nature Portfolio journals

Get Nature+, our best-value online-access subscription

$29.99 / 30 days

cancel any time

Subscribe to this journal

Receive 51 print issues and online access

$199.00 per year

only $3.90 per issue

Rent or buy this article

Get just this article for as long as you need it

$39.95

Prices may be subject to local taxes which are calculated during checkout

The data that support the findings of this study are available from the corresponding author on reasonable request.

All computational data are presented in the manuscript. All DFT calculations were performed using VASP, which is commercially available at https://www.vasp.at/.

A Correction to this paper has been published: https://doi.org/10.1038/s41586-023-06093-6

Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).

Article ADS CAS PubMed Google Scholar

Wang, S., Liu, X. & Zhou, P. The road for 2D semiconductors in the silicon age. Adv. Mater. 34, 2106886 (2022).

Article CAS Google Scholar

International Roadmap for Devices and Systems 2017 Edition https://irds.ieee.org/ (IEEE, 2017).

Shen, Y. et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms. Adv. Mater. 34, 2201916 (2022).

Article CAS Google Scholar

Huang, X., Liu, C. & Zhou, P. 2D semiconductors for specific electronic applications: from device to system. npj 2D Mater. Appl. 6, 51 (2022).

Article CAS Google Scholar

International Roadmap for Devices and Systems 2021 Edition https://irds.ieee.org/ (IEEE, 2021).

Lundstrom, M. Moore's law forever? Science 299, 210–211 (2003).

Article CAS PubMed Google Scholar

Waldrop, M. M. The chips are down for Moore's law. Nature 530, 144–147 (2016).

Article ADS CAS PubMed Google Scholar

Theis, T. N. & Wong, H. S. P. The end of Moore's law: a new beginning for information technology. Comput. Sci. Eng. 19, 41–50 (2017).

Article Google Scholar

Yeap, G. et al. 5 nm CMOS production technology platform featuring full-fledged EUV, and high mobility channel FinFETs with densest 0.021 μm2 SRAM cells for mobile SoC and high performance computing applications. 2019 IEEE International Electron Devices Meeting (IEDM), 36.7.1–36.7.4 (IEEE, 2019).

Wu, S.-Y. et al. A 7 nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027 um2 high density 6-T SRAM cell for mobile SoC applications. 2016 IEEE International Electron Devices Meeting (IEDM), 2.6.1–2.6.4 (IEEE, 2016).

Jagannathan, H. et al. Vertical-transport nanosheet technology for CMOS scaling beyond lateral-transport devices. 2021 IEEE International Electron Devices Meeting (IEDM), 26.1.1–26.1.4 (IEEE, 2021).

Veloso, A. et al. Nanowire & nanosheet FETs for advanced ultra-scaled, high-density logic and memory applications. 2020 China Semiconductor Technology International Conference (CSTIC), 1–4 (IEEE, 2020).

Illarionov, Y. Y., Knobloch, T. & Grasser, T. Native high-k oxides for 2D transistors. Nat. Electron. 3, 442–443 (2020).

Article CAS Google Scholar

Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).

Article ADS CAS PubMed Google Scholar

Huang, J.-K. et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature 605, 262–267 (2022).

Article ADS CAS PubMed Google Scholar

Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).

Article ADS CAS PubMed Google Scholar

Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).

Article ADS CAS Google Scholar

Shen, P. C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).

Article ADS CAS PubMed Google Scholar

Wu, J. et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotechnol. 12, 530–534 (2017).

Article ADS CAS PubMed Google Scholar

Li, T. et al. A native oxide high-κ gate dielectric for two-dimensional electronics. Nat. Electron. 4, 731–739 (2020).

Google Scholar

Zhang, Y. et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nat. Electron. 5, 643–649 (2022).

Article CAS Google Scholar

Li, T. & Peng, H. 2D Bi2O2Se: an emerging material platform for the next-generation electronic industry. Acc. Mater. Res. 2, 842–853 (2021).

Article ADS CAS Google Scholar

Tan, C. et al. Strain-free layered semiconductors for 2D transistors with on-state current density exceeding 1.3 mA μm−1. Nano Lett. 22, 3770–3776 (2022).

Article ADS CAS PubMed Google Scholar

Wu, J. et al. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett. 17, 3021–3026 (2017).

Article ADS CAS PubMed Google Scholar

Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the gap to bridge. Nat. Commun. 11, 3385 (2020).

Article ADS CAS PubMed PubMed Central Google Scholar

Knobloch, T. et al. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nat. Electron. 5, 356–366 (2022).

Article CAS PubMed PubMed Central Google Scholar

Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).

Article CAS Google Scholar

Illarionov, Y. Y. et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat. Electron. 2, 230–235 (2019).

Article CAS Google Scholar

Chen, W. et al. High-fidelity transfer of 2D Bi2O2Se and its mechanical properties. Adv. Funct. Mater. 30, 2004960 (2020).

Article CAS Google Scholar

Tang, X. et al. A simple method for measuring Si-Fin sidewall roughness by AFM. IEEE Trans. Nanotechnol. 8, 611–616 (2009).

Article ADS Google Scholar

Natarajan, S. et al. A 14 nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 μm2 SRAM cell size. 2014 IEEE International Electron Devices Meeting, 3.7.1–3.7.3 (IEEE, 2014).

Auth, C. et al. A 22 nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors. 2012 Symposium on VLSI Technology (VLSIT), 131–132 (IEEE, 2012).

Jovanović, V., Suligoj, T., Poljak, M., Civale, Y. & Nanver, L. K. Ultra-high aspect-ratio FinFET technology. Solid State Electron. 54, 870–876 (2010).

Article ADS Google Scholar

Ha, D. et al. Molybdenum gate HfO2 CMOS FinFET technology. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 643–646 (IEEE, 2004).

van Dal, M. J. H. et al. Ge n-channel FinFET with optimized gate stack and contacts. 2014 IEEE International Electron Devices Meeting, 9.5.1–9.5.4 (IEEE, 2014).

Mitard, J. et al. First demonstration of 15 nm-WFIN inversion-mode relaxed-germanium n-FinFETs with Si-cap free RMG and NiSiGe source/drain. 2014 IEEE International Electron Devices Meeting, 16.5.1–16.5.4 (IEEE, 2014).

Chung, C.-T. et al. First experimental Ge CMOS FinFETs directly on SOI substrate. 2012 International Electron Devices Meeting, 16.4.1–16.4.4 (IEEE, 2012).

Chung, C.-T. et al. Epitaxial germanium on SOI substrate and its application of fabricating high ION/IOFF ratio Ge FinFETs. IEEE Trans. Electron Devices 60, 1878–1883 (2013).

Article ADS CAS Google Scholar

Gong, X. et al. InAlP-capped (100) Ge nFETs with 1.06 nm EOT: achieving record high peak mobility and first integration on 300 mm Si substrate. 2014 IEEE International Electron Devices Meeting, 9.4.1–9.4.4 (IEEE, 2014).

Chang, W. H., Ota, H. & Maeda, T. Gate-first high-performance germanium nMOSFET and pMOSFET using low thermal budget Ion implantation after germanidation technique. IEEE Electron Device Lett. 37, 253–256 (2016).

Article ADS CAS Google Scholar

Chen, M.-L. et al. A FinFET with one atomic layer channel. Nat. Commun. 11, 1205 (2020).

Article ADS CAS PubMed PubMed Central Google Scholar

Lan, Y.-W. et al. Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors. Nanoscale Horiz. 4, 683–688 (2019).

Article ADS CAS Google Scholar

Chen, M.-C. et al. TMD FinFET with 4 nm thin body and back gate control for future low power technology. 2015 IEEE International Electron Devices Meeting (IEDM), 32.2.1–32.2.4 (IEEE, 2015).

Desai, S. B. et al. MoS2 transistors with 1-nanometer gate lengths. Science 354, 99–102 (2016).

Article ADS CAS PubMed Google Scholar

Xie, L. et al. Graphene-contacted ultrashort channel monolayer MoS2 transistors. Adv. Mater. 29, 1702522 (2017).

Article Google Scholar

Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201–1207 (2021).

Article ADS CAS PubMed Google Scholar

Wang, Y. et al. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 568, 70–74 (2019).

Article ADS CAS PubMed Google Scholar

Sebastian, A., Pendurthi, R., Choudhury, T. H., Redwing, J. M. & Das, S. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 12, 693 (2021).

Article ADS CAS PubMed PubMed Central Google Scholar

Gao, Q. et al. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nat. Commun. 9, 4778 (2018).

Article ADS PubMed PubMed Central Google Scholar

Liu, L. et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature 605, 69–75 (2022).

Article ADS CAS PubMed Google Scholar

Liu, H., Neal, A. T. & Ye, P. D. Channel length scaling of MoS2 MOSFETs. ACS Nano 6, 8563–8569 (2012).

Article CAS PubMed Google Scholar

Haratipour, N. & Koester, S. J. Ambipolar black phosphorus MOSFETs with record n-channel transconductance. IEEE Electron Device Lett. 37, 103–106 (2016).

Article ADS CAS Google Scholar

Li, P. et al. p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices. RSC Adv. 9, 35039–35044 (2019).

Article ADS CAS PubMed PubMed Central Google Scholar

Tan, C. et al. Wafer-scale growth of single-crystal 2D semiconductor on perovskite oxides for high-performance transistors. Nano Lett. 19, 2148–2153 (2019).

Article ADS CAS PubMed Google Scholar

Tan, C. et al. Vapor-liquid-solid growth of Bi2O2Se nanoribbons for high-performance transistors. Acta Phys. Chim. Sin. 36, 1908038 (2020).

Article Google Scholar

Gao, X. et al. SEM imaging of insulating specimen through a transparent conducting veil of carbon nanotube. Nano Res. 15, 6407–6415 (2022).

Article ADS CAS Google Scholar

Download references

We thank C. Qiu and J. Jiang for helping with the device fabrication and providing useful discussion. We acknowledge the Molecular Materials and Nanofabrication Laboratory (MMNL) at the College of Chemistry and Molecular Engineering at Peking University for the use of instruments. This work was supported by the National Natural Science Foundation of China (21733001, 21920102004, 52021006, 22205011, 92164205 and 22105009), National Key Research & Development Program (2021YFA1202901), Beijing National Laboratory for Molecular Sciences (BNLMS-CXTD-202001) and the Tencent Foundation (The XPLORER PRIZE). C.T. acknowledges the support from the China Postdoctoral Science Foundation and Boya Postdoctoral Fellowship. F.D. and Y.Y. acknowledge the Institute for Basic Science (IBS-R019-D1) of the Republic of Korea.

These authors contributed equally: Congwei Tan, Mengshi Yu, Junchuan Tang, Xiaoyin Gao

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China

Congwei Tan, Mengshi Yu, Junchuan Tang, Xiaoyin Gao, Yichi Zhang, Jingyue Wang, Congcong Zhang, Xuehan Zhou, Liming Zheng, Hongtao Liu & Hailin Peng

Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, South Korea

Yuling Yin & Feng Ding

School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea

Yuling Yin & Feng Ding

State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China

Xinyu Gao & Kaili Jiang

Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, China

Xinyu Gao & Kaili Jiang

You can also search for this author in PubMed Google Scholar

H.P. and C.T. conceived the project and designed the experiments. C.T. and M.Y. carried out the synthesis of the 2D fins and 2D fin-oxide heterostructures. C.T., Y.Z. and M.Y. prepared the ultrathin 2D fins. Xiaoyin Gao and C.T. conducted the STEM and energy-dispersive spectroscopy characterizations and analysed the results. Xinyu Gao, K.J. and C.T. performed the high-resolution SEM characterizations. C.T., J.T. and J.W. were involved in device fabrication and electrical characterization. F.D. and Y.Y. performed the theoretical calculations. C.Z., X.Z., L.Z. and H.L. provided the data analysis and suggestions. C.T. and H.P. cowrote the manuscript. H.P. supervised this research. All authors contributed to discussions.

Correspondence to Hailin Peng.

The authors declare no competing interests.

Nature thanks Haozhe Wang and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

Publisher's note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

a–c, 3D representation (a), top view (b) and lateral view (c) of the Bi2O2Se crystal structure. d–f, 3D representation (d), top view (e) and lateral view (f) of the Bi2SeO5 crystal structure. Note that the lattice parameters and the positions of the Bi and Se atoms in the layered Bi2SeO5 crystal structure are determined experimentally. However, the O positions in the [SeO3]2− layers are inferred from the combination of lattice parameters, spatial relations and coordination of Se–O, because the light atom O needs to be confirmed precisely by more advanced experimental measurements22. g,h, 3D representation (g) and (100) facet lattice (h) of the LaAlO3 crystal structure. i,j, 3D representation (i) and (110) facet lattice (j) of the MgO crystal structure.

The high-mobility 2D layered Bi2O2Se fins are first epitaxially prepared as a backbone by chemical vapour synthesis, because the ${[{{\rm{Bi}}}_{2}{{\rm{O}}}_{2}]}_{{n}}^{2{n}+}$ layers of Bi2O2Se crystal have many dangling bonds at two side edges, which can easily incorporate with active atoms coming directly from the substrate surfaces and form the strong edge-bonding interfaces. The epitaxy of 2D Bi2O2Se fins was triggered from the vertically oriented nuclei and anisotropic growth. Furthermore, Bi2O2Se crystals were facially oxidized into high-k Bi2SeO5 dielectric by means of a low-temperature intercalation chemistry. Bi2SeO5 epitaxially encapsulates over 2D layered Bi2O2Se fins to form the 2D fin-oxide heterostructures on insulated substrates.

a, Photograph of the homemade CVD system used for vertical 2D Bi2O2Se fin arrays growth. b, Temperature gradient profile in the centre of a quartz tube when the furnace temperature is set to 640 °C. c–e, Schematic and SEM images of the vertical 2D Bi2O2Se fin arrays synthesized by the vertical co-evaporation method. f,g, Schematic and SEM image of the vertical 2D Bi2O2Se fin arrays synthesized by the gas transport method. h,i, Schematic and SEM image of the vertical 2D Bi2O2Se fin arrays synthesized by the oxidation method.

a, Schematic for anisotropic growth of vertical 2D Bi2O2Se fins. b,c, Cross-sectional-view crystallographic modelling of the interfacial atomic arrangement between the Bi2O2Se fin and the LaAlO3 (100) substrate. d, In-plane lattice matching between the Bi2O2Se fin and the LaAlO3 (100) substrate. e–h, Schematics (e), AFM (f) and tilted SEM (g,h) images of a vertical 2D Bi2O2Se fin synthesized with different growth times of 10 s, 1 min and 5 min. Note that the sample and the insulating substrate were coated with a transparent and conducting carbon nanotube film to eliminate the charging effect during SEM imaging57. i,j, Tilted SEM images of fins with different aspect ratio obtained with 0 and 40 ppm O2, respectively. The growth time is approximately 10 s. k, Statistics for the aspect ratio of fins as a function of oxygen concentration. l, Statistics for fin height and fin thickness as a function of oxygen concentration. m,n, The AFM image and corresponding profile of a 10-nm-thick 2D fin with an aspect ratio of about 10 transferred onto mica substrates. The high aspect ratio (fin height/thickness) is induced by anisotropic growth of layered 2D fins, which can be further modified by tuning the oxygen concentration during growth. As the oxygen concentration was changed from 0 ppm to about 40 ppm, the aspect ratio of 2D fins decreased from about 50 to about 8. The possible reason for the above phenomenon is probably related to the oxygen absorption on the substrate surface during the nucleation process of 2D fins. When the oxygen concentration is relatively high, the absorbing rate of the oxygen is relatively high on the substrate surface, so the absorbed precursors would accumulate and nucleate on the substrate with greater probability, then crystallize into relatively thick 2D Bi2O2Se fins, resulting in smaller aspect ratio. Also, after further shortening the growth time, the aspect ratio of the 10-nm-thick 2D fin is about 10, which is comparable with the state-of-the-art Si fin (also about 10)10.

a,b, Optimized structures of 2D layered Bi2O2Se islands on the LaAlO3 (100) surface, in which the difference of interfacial interactions is also shown. The calculations showed direct edge bonding of the unsaturated ${[{{\rm{Bi}}}_{2}{{\rm{O}}}_{2}]}_{{n}}^{2{n}+}$ layers to substrate in the vertical nucleation process of 2D Bi2O2Se fins. c, DFT calculations of the binding energies of a Bi2O2Se island with different nucleation types on the LaAlO3 (100) and MgO (110) surfaces. The results clearly showed that, on the LaAlO3 (100) and MgO (110) surfaces, the vertically aligned 2D Bi2O2Se is much more stable than the horizontally aligned one by direct bonding to the epitaxial surface through the ${[{{\rm{Bi}}}_{2}{{\rm{O}}}_{2}]}_{{n}}^{2{n}+}$ layer edge. We conclude that the nucleation of vertical 2D Bi2O2Se is governed by an edge-bonding-guided mechanism.

Using chemical vapour synthesis, the 2D layered Bi2O2Se fins are first epitaxially prepared as backbones and then partially and intercalatively oxidized into 2D layered Bi2O2Se/Bi2SeO5 fin-oxide heterostructure arrays on LaAlO3 (100) (a,b), MgO (110) (c,d), CaF2 (110) (e,f), LaAlO3 (110) (g,h), SrTiO3 (110) (i,j) and KTaO3 (110) (k,l) substrates.

a, Cross-sectional high-resolution STEM micrograph of the interface structures between the heterostructure and the LaAlO3 (100) substrate. b,c, Experimental (b) and simulated (c) FFT pattern of a, showing the epitaxial relationship of Bi2O2Se, Bi2SeO5 and LaAlO3. d, Cross-sectional high-resolution STEM micrograph of the interface structures between the Bi2O2Se fin and the LaAlO3 (100) substrate. e, Strain mapping (ɛxx) estimated from a filtered version of panel d. f, High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images of the Bi2O2Se/LaAlO3 interface with atomic model.

a–n, Transfer and output curves for channel lengths ranging from 400 nm to 3,280 nm. o, Transfer length model plot of total resistance (Rtot) versus channel length (Lch) from 2D Bi2O2Se/Bi2SeO5/HfO2 FinFETs. The lines represent linear fits to data and the intercept is used to extract contact resistance (RC) by means of the equation Rtot = Rch + 2RC, in which Rch is channel resistance.

a, Schematic diagram of a 2D FinFET fabricated with Bi2SeO5 dielectric solely. b, Tilted-view SEM image of as-fabricated FinFET with a channel length (Lch) of 3 μm. c,d, Transfer (c) and output (d) curves of the FinFET in b.

a,b, Schematic diagram of 2D FinFETs fabricated on 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructure (a) and 2D Bi2O2Se fin (b). c,d, Transfer curves obtained from fabricated 2D Bi2O2Se/Bi2SeO5/HfO2 FinFETs (c) and 2D Bi2O2Se/HfO2 FinFETs (d) with 1.5-μm channel length. e, Transconductance (gm) as a function of gate voltages for 2D Bi2O2Se/Bi2SeO5/HfO2 and Bi2O2Se/HfO2 FinFETs. f, Field-effect mobility (μ) as a function of gate voltages for 2D Bi2O2Se/Bi2SeO5/HfO2 and Bi2O2Se/HfO2 FinFETs.

This file contains Supplementary Figures 1–9 and Supplementary Table 1.

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and Permissions

Tan, C., Yu, M., Tang, J. et al. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide. Nature 616, 66–72 (2023). https://doi.org/10.1038/s41586-023-05797-z

Download citation

Received: 01 February 2022

Accepted: 06 February 2023

Published: 22 March 2023

Issue Date: 06 April 2023

DOI: https://doi.org/10.1038/s41586-023-05797-z

Anyone you share the following link with will be able to read this content:

Sorry, a shareable link is not currently available for this article.

Provided by the Springer Nature SharedIt content-sharing initiative

Science China Chemistry (2023)

By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.

Blog